The ICP (inductively coupled plasma) allows for fast through etching of silicon. Incorporating the Bosch etch process allows high aspect ratio etching. The STS reactive ion-etching system allows controlled plasma etching of insulating layers such as silicon dioxide.
Other processing equipment includes:
- deposition systems for LPCVD, PECVD and APCVD which can deposit various insulators and semiconducting layers such as silicon dioxide, silicon nitride and polysilicon;
- sputtering and evaporation systems for deposition of metals such as Titanium, Copper and Aluminium; and
- for Liquid Crystal work the facility also houses a polyimide rubbing machine and liquid crystal vacuum fill system.
